InP MIS structure with phosphorus-nitride film grown by photo-CVD

Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub 3/N/sub 5/-InP MIS structure after the in-situ pretreatment and postanneal is about 3.6*10/sup 10/ cm/sup -2/ eV/sup -1/ near the midgap of the InP. Depth profiles determined from X-ray photoelectron and Auger spectroscopy data at deposition temperatures of 200 degrees C and 150 degrees C, respectively, show that the O atoms pile up at the P/sub 3/N/sub 5//InP interface and diffuse toward the P/sub 3/N/sub 5/ film. The data are used to evaluate the film and the interface.<>