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引用次数: 3
摘要
二极管泵浦半导体磁盘激光器是基于二极管泵浦固态磁盘激光器的原理。这种相对新型的激光器也被称为VECSEL(垂直外腔表面发射激光器)。半导体圆盘激光器具有优异的光束特性和高输出功率。利用这种新方法，可以克服目前vcsel的注入问题和由于激光反射镜处的高光强而导致的边缘发射激光器的facet退化效应。此外，磁盘激光器的外腔可以配备非线性晶体等附加元件进行倍频，本文提出了一种基于inalgaas的腔内倍频半导体磁盘激光器，在491 nm处输出功率为23 m W。
Diode-pumped semiconductor disk lasers are based on the principle of diode-pumped solid-state disk lasers. This relatively new type of laser is also referred to as VECSEL (vertical external cavity surface emitting laser). Semiconductor disk lasers show excellent beam characteristics in combination with high output power. With this novel approach, the current injection problems of VCSELs and the facet degradation effects of edge-emitting lasers due to the high optical intensities at the laser mirrors can be overcome. Furthermore the external cavity of the disk laser can be equipped with additional elements such as nonlinear crystals for frequency doubling, In this paper we present an InAlGaAs-based semiconductor disk laser with intracavity frequency doubling having an output power of 23 m W at 491 nm.
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