{"title":"超薄体和大块氧化cmosfet的器件可变性和可靠性检查","authors":"W. Yeh, C. Lai, L. Chin, Po-Ying Chen","doi":"10.1109/EDSSC.2013.6628081","DOIUrl":null,"url":null,"abstract":"In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device's characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive to substrate back bias. And we found that low substrate dose SOI device which with lower impact ionization shows better device's reliability than the high substrate dose one does.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs\",\"authors\":\"W. Yeh, C. Lai, L. Chin, Po-Ying Chen\",\"doi\":\"10.1109/EDSSC.2013.6628081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device's characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive to substrate back bias. And we found that low substrate dose SOI device which with lower impact ionization shows better device's reliability than the high substrate dose one does.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs
In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device's characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive to substrate back bias. And we found that low substrate dose SOI device which with lower impact ionization shows better device's reliability than the high substrate dose one does.