{"title":"半绝缘GaAs:Cu的补偿机制和输运行为","authors":"B.H. Yang, D. Seghier, H. Gíslason","doi":"10.1109/SIM.1996.570931","DOIUrl":null,"url":null,"abstract":"Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu\",\"authors\":\"B.H. Yang, D. Seghier, H. Gíslason\",\"doi\":\"10.1109/SIM.1996.570931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu
Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material.
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