用于频谱高效光传输系统的超高速功率dac

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062439

J. Godin, A. Konczykowska, J. Dupuy, F. Jorge, A. Gnauck, M. Riet, J. Moulu, V. Nodjiadjim, P. Berdaguer, F. Blache

{"title":"用于频谱高效光传输系统的超高速功率dac","authors":"J. Godin, A. Konczykowska, J. Dupuy, F. Jorge, A. Gnauck, M. Riet, J. Moulu, V. Nodjiadjim, P. Berdaguer, F. Blache","doi":"10.1109/CSICS.2011.6062439","DOIUrl":null,"url":null,"abstract":"This paper reports on very high speed large swing digital-to-analog converter (DAC) suiting the generation of spectrally efficient optical transmission signals. 2-bit and 3-bit DACS with up to 4 Vpp swing, operating up to 50 GBaud, have been fabricated using our InP DHBT technology (FT ~280 GHz, FMAX ~270 GHz, BVCE0 ~5 V). These chips have been packaged and used to generate 16- and 64-QAM signals in optical transmission experiments at various bitrates.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"InP DHBT Very High Speed Power-DACs for Spectrally Efficient Optical Transmission Systems\",\"authors\":\"J. Godin, A. Konczykowska, J. Dupuy, F. Jorge, A. Gnauck, M. Riet, J. Moulu, V. Nodjiadjim, P. Berdaguer, F. Blache\",\"doi\":\"10.1109/CSICS.2011.6062439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on very high speed large swing digital-to-analog converter (DAC) suiting the generation of spectrally efficient optical transmission signals. 2-bit and 3-bit DACS with up to 4 Vpp swing, operating up to 50 GBaud, have been fabricated using our InP DHBT technology (FT ~280 GHz, FMAX ~270 GHz, BVCE0 ~5 V). These chips have been packaged and used to generate 16- and 64-QAM signals in optical transmission experiments at various bitrates.\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文报道了一种适用于光传输信号的高速大摆幅数模转换器(DAC)。采用我们的InP DHBT技术(FT ~280 GHz, FMAX ~270 GHz, BVCE0 ~5 V)制作了摆幅高达4 Vpp、工作频率高达50 GBaud的2位和3位dac，这些芯片已被封装并用于在各种比特率的光传输实验中产生16和64 qam信号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP DHBT Very High Speed Power-DACs for Spectrally Efficient Optical Transmission Systems

This paper reports on very high speed large swing digital-to-analog converter (DAC) suiting the generation of spectrally efficient optical transmission signals. 2-bit and 3-bit DACS with up to 4 Vpp swing, operating up to 50 GBaud, have been fabricated using our InP DHBT technology (FT ~280 GHz, FMAX ~270 GHz, BVCE0 ~5 V). These chips have been packaged and used to generate 16- and 64-QAM signals in optical transmission experiments at various bitrates.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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