隧道效应和反转层量化效应对深亚微米MOSFET的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785914

Xiaoyan Liu, Jinfeng Kang, R. Han

{"title":"隧道效应和反转层量化效应对深亚微米MOSFET的影响","authors":"Xiaoyan Liu, Jinfeng Kang, R. Han","doi":"10.1109/ICSICT.1998.785914","DOIUrl":null,"url":null,"abstract":"Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET's threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET\",\"authors\":\"Xiaoyan Liu, Jinfeng Kang, R. Han\",\"doi\":\"10.1109/ICSICT.1998.785914\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET's threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785914\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在研究超薄栅氧化MOSFET反演层中电子的二维性质的基础上，建立了隧道效应和反演层量化效应对深亚微米MOSFET阈值电压的影响模型。利用该模型可以估计隧道效应和反转层量化效应对MOSFET阈值电压的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

The influence of tunneling effect and inversion layer quantization effect on deep submicron MOSFET

Based on the studies of the two dimensional nature of electrons in inversion layer of the ultra thin gate oxide MOSFET model to describe tunneling effect and inversion layer quantization effect on deep submicron MOSFET's threshold voltage is developed. By using of this model the influence of tunneling effect and the inversion layer quantization effect on the MOSFET threshold voltage can be estimated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

自引率

0.00%

发文量