一种用于Mbit SRAM的多比特测试触发电路

F. Miyaji, T. Emort, Y. Matsuyama, Y. Kanaishi, K. Senoh, Y. Hagiwara
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引用次数: 1

摘要

近年来,SRAM的存储比特密度越来越高。另一方面,由直流参数测试和交流功能测试组成的测试时间越来越长。当使用n测试模式时,交流测试时间与存储器位密度成比例地增加。因此,在相同位组织的情况下,4Mb SRAM的测试时间是1Mb SRAM的四倍。在批量生产中,测试时间过长是一个非常严重的问题。因此,开发了减少测试时间的测试模式111-[31]。但是SRAM的多比特测试(MET)触发电路还没有在没有额外NC(非连接)引脚封装的情况下开发出来。本文提出了一种用于无NC引脚封装的MBT SRAH的MBT触发电路。
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A multi bit test trigger circuit for Mbit SRAM's
In recent years, the memory bit density of SRAM's becomes higher and higher. On the other hand, the testing time which is composed of DC parametric and AC functional tests becomes longer and longer. The AC test time increases in proportion to the memory bit density vhen N-test patterns are used. Therefore, the testing time of 4Mb SRAM is quadruple compared with that of 1Mb SRAM's in the case of the same bit organizations. It is very serious problem to spend long testing time in mass production. Therefore, the test modes for reduction of the testing time have been developed 111-[3l. But Multi Bit Test (MET) trigger circuit for SRAM's has not been developed in the case of the no extra NC (Non Connection)pin package. This paper will present a MBT trigger circuit for Mbit SRAH's having no extra NC pin package.
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