{"title":"高效线性化GaAs MMIC的电路技术","authors":"D. Haigh","doi":"10.1109/MCS.1992.186030","DOIUrl":null,"url":null,"abstract":"Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Circuit techniques for efficient linearised GaAs MMIC's\",\"authors\":\"D. Haigh\",\"doi\":\"10.1109/MCS.1992.186030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Circuit techniques for efficient linearised GaAs MMIC's
Novel circuit designs for monolithic microwave integrated circuit (MMIC) technology using depletion-mode GaAs MESFETs are discussed. A synthesis method leading to high-efficiency implementation of linear functions based on a square-law FET characteristic is presented and used to design a linearized isolator, which is compared with a nonlinearized design. A circuit equivalent to a common-gate FET, but with linearity, high efficiency, and reduced FET gate-width and power consumption, is proposed for future use in improved isolators and amplifiers.<>