{"title":"低导通电压降的4kv绝缘栅控可控硅","authors":"J. Sakano, H. Kobayashi, M. Nagusu, M. Mori","doi":"10.1109/ISPSD.1996.509493","DOIUrl":null,"url":null,"abstract":"A novel Insulated Gate Controlled Thyristor (IGCT) is described. The IGCT has a MOSFET that controls the thyristor current, and a thyristor with floating p-base for a low on-state voltage drop. The 4 kV IGCT is fabricated using optimized field limiting rings and field plates, and shows a very low on-state voltage drop of 4.4 V, while that of a 4 kV IGRT is 5.6 V. However, the maximum controllable current of the IGCT is lower than that of the IGBT. The low on-state voltage drop and a high maximum controllable current have been accomplished by optimizing the p-base structure.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"4 kV insulated gate controlled thyristor with low on-state voltage drop\",\"authors\":\"J. Sakano, H. Kobayashi, M. Nagusu, M. Mori\",\"doi\":\"10.1109/ISPSD.1996.509493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel Insulated Gate Controlled Thyristor (IGCT) is described. The IGCT has a MOSFET that controls the thyristor current, and a thyristor with floating p-base for a low on-state voltage drop. The 4 kV IGCT is fabricated using optimized field limiting rings and field plates, and shows a very low on-state voltage drop of 4.4 V, while that of a 4 kV IGRT is 5.6 V. However, the maximum controllable current of the IGCT is lower than that of the IGBT. The low on-state voltage drop and a high maximum controllable current have been accomplished by optimizing the p-base structure.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4 kV insulated gate controlled thyristor with low on-state voltage drop
A novel Insulated Gate Controlled Thyristor (IGCT) is described. The IGCT has a MOSFET that controls the thyristor current, and a thyristor with floating p-base for a low on-state voltage drop. The 4 kV IGCT is fabricated using optimized field limiting rings and field plates, and shows a very low on-state voltage drop of 4.4 V, while that of a 4 kV IGRT is 5.6 V. However, the maximum controllable current of the IGCT is lower than that of the IGBT. The low on-state voltage drop and a high maximum controllable current have been accomplished by optimizing the p-base structure.
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