一个2倍过采样,128-GS/s 5位Flash ADC,用于64-GBaud应用

Alireza Zandieh, P. Schvan, S. Voinigescu
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引用次数: 9

摘要

我们报告了在任何半导体技术中采样率最高的单芯片ADC。该电路采用2倍时间交错结构,集成了两个跟踪保持放大器,每个放大器驱动一个5位闪存子adc,采样频率为64 GHz,反相位。两个子ADC的数字输出馈送一个片上128-GS/s温度计编码的DAC,其唯一目的是测试ADC。ADC-DAC组合的性能,包括SFDR和高达32ghz输入信号的4.1位ENOB,在芯片上进行了表征,并包括DAC的影响。通过采用新颖的1-mA Cherry-Hooper比较器和具有有源峰值的准cml MOS-HBT锁存器,最大限度地降低了ADC的功耗和布局占用,从而将64个ADC通道中的每个通道的占用减少到$\mathbf{10}\mu\mathbf{m\ 70}\mu\mathbf{m}$。ADC的总功耗为1.25 W, ADC- dac芯片的总晶片面积为$\mathbf{1.1}\mathbf{mm}\乘以\mathbf{1.9}\mathbf{mm}$。
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A 2x-Oversampling, 128-GS/s 5-bit Flash ADC for 64-GBaud Applications
We report the highest sampling-rate single-chip ADC in any semiconductor technology. The circuit uses a 2x time-interleaved architecture integrating two track-and-hold amplifiers, each driving a 5-bit flash sub-ADC sampled at 64 GHz in antiphase. The digital outputs of the two sub-ADCs feed an on-die 128-GS/s thermometer-coded DAC whose sole purpose is for testing the ADC. The performance of the ADC-DAC combo, including the SFDR, and the ENOB of 4.1 bits up to 32-GHz input signals, was characterized on die and includes the impact of the DAC. The power consumption and layout footprint of the ADC, critical for operation at 128-GS/s, were minimized by employing novel 1-mA Cherry-Hooper comparators and quasi-CML MOS-HBT latches with active peaking, which reduced the footprint of each of the 64 ADC-lanes to $\mathbf{10}\mu\mathbf{m\ 70}\mu\mathbf{m}$. The total power consumption of the ADC is 1.25 W and the total die area of the ADC-DAC chip is $\mathbf{1.1}\mathbf{mm}\times\mathbf{1.9}\mathbf{mm}$.
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