M. H. Rais, C. Musca, J. Dell, J. Antoszewski, B. Nener
{"title":"高温下HgCdTe 3-5微米红外光伏探测器的低频噪声","authors":"M. H. Rais, C. Musca, J. Dell, J. Antoszewski, B. Nener","doi":"10.1109/COMMAD.1998.791665","DOIUrl":null,"url":null,"abstract":"This paper presents a study on the temperature and bias dependence of 1/f noise for mid-wavelength infrared (MWIR) HgCdTe n-on-p photodiodes fabricated on vacancy doped p-type LPE grown epilayers. The low frequency noise spectrum is fitted to a theoretical model to determine the dark current mechanism responsible for the 1/f noise component. At temperatures above 130 K the 1/f noise is dominated by the diffusion current component, and the temperature dependence in this regime gives an activation energy of 0.73E/sub g/. The Hooge parameter obtained from the model increased monotonically from 1.7/spl times/10/sup -4/ to 2.25/spl times/10/sup -3/ as the temperature was varied from 130 K to 180 K.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures\",\"authors\":\"M. H. Rais, C. Musca, J. Dell, J. Antoszewski, B. Nener\",\"doi\":\"10.1109/COMMAD.1998.791665\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a study on the temperature and bias dependence of 1/f noise for mid-wavelength infrared (MWIR) HgCdTe n-on-p photodiodes fabricated on vacancy doped p-type LPE grown epilayers. The low frequency noise spectrum is fitted to a theoretical model to determine the dark current mechanism responsible for the 1/f noise component. At temperatures above 130 K the 1/f noise is dominated by the diffusion current component, and the temperature dependence in this regime gives an activation energy of 0.73E/sub g/. The Hooge parameter obtained from the model increased monotonically from 1.7/spl times/10/sup -4/ to 2.25/spl times/10/sup -3/ as the temperature was varied from 130 K to 180 K.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791665\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures
This paper presents a study on the temperature and bias dependence of 1/f noise for mid-wavelength infrared (MWIR) HgCdTe n-on-p photodiodes fabricated on vacancy doped p-type LPE grown epilayers. The low frequency noise spectrum is fitted to a theoretical model to determine the dark current mechanism responsible for the 1/f noise component. At temperatures above 130 K the 1/f noise is dominated by the diffusion current component, and the temperature dependence in this regime gives an activation energy of 0.73E/sub g/. The Hooge parameter obtained from the model increased monotonically from 1.7/spl times/10/sup -4/ to 2.25/spl times/10/sup -3/ as the temperature was varied from 130 K to 180 K.