微管量子阱中电子能带结构修饰的观察

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237254

Y. Kishimoto, S. Saravanan, K. Kubota, P. Vaccaro, M. Sato, J.M. Zanardi Ocampo, T. Aida, N. Ohtani, M. Hosoda

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摘要

将含有窄宽度量子阱的约40 nm厚的半导体层卷成半导体量子阱(QW)微管。通过对量子阱微管卷入前后光致发光特性的变化，研究了量子阱微管的亚带能量修饰。由于微管中的应变效应，我们观察到电子子带结构由ii型向i型转变。

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Observation of electronic band-structure modification in microtubed quantum well

A semiconductor quantum-well (QW) microtube was fabricated by rolling up an approximately 40-nm thick semiconductor layer containing a narrow-width QW. Subband energy modification in the QW microtube was studied by the change in the photoluminescence properties before and after the layer was rolled up into the microtube. We observed type-II to type-I transition in the electronic subband structure due to the strain effect in the microtube.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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