{"title":"GaNHEMTs供体样表面阱发射的研究","authors":"Amirali Chalechale, M. Shalchian, F. Jazaeri","doi":"10.1109/IICM55040.2021.9730149","DOIUrl":null,"url":null,"abstract":"Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AIGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"319 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Donor-like Surface Trap Emission in GaNHEMTs\",\"authors\":\"Amirali Chalechale, M. Shalchian, F. Jazaeri\",\"doi\":\"10.1109/IICM55040.2021.9730149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AIGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.\",\"PeriodicalId\":299499,\"journal\":{\"name\":\"2021 Iranian International Conference on Microelectronics (IICM)\",\"volume\":\"319 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Iranian International Conference on Microelectronics (IICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IICM55040.2021.9730149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Iranian International Conference on Microelectronics (IICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICM55040.2021.9730149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of Donor-like Surface Trap Emission in GaNHEMTs
Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AIGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.
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