{"title":"一种28GHz谐波注入多尔蒂功率放大器","authors":"Armin Amirkhani, Negar Choupan, A. Nabavi","doi":"10.1109/IICM55040.2021.9730246","DOIUrl":null,"url":null,"abstract":"In this paper, a 28 GHz fully on-chip Doherty power amplifier with harmonic injection is presented in 65 nm CMOS technology. In order to improve the linearity, two injection amplifier stages biased in class C are used. In this method, injection of the second harmonic compensates the gain compression phenomena and improves the output $\\mathrm{P}_{-}1\\text{dB}$ and PAE at $\\mathrm{P}_{-}1\\text{dB}$ by more than 6 dB and 9 %, respectively. Post-Layout EM (electromagnetic) simulation of PA illustrates maximum PAE of 19.6%, output $\\mathrm{P}_{-}1\\text{dB}$ of 15.76 dBm, PAE of 14% at 6dB back-off, 6 dB gain, and 19 dBm saturated output power. The layout area is 0.445 mm2.","PeriodicalId":299499,"journal":{"name":"2021 Iranian International Conference on Microelectronics (IICM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 28GHz Harmonic Injection Doherty Power Amplifier\",\"authors\":\"Armin Amirkhani, Negar Choupan, A. Nabavi\",\"doi\":\"10.1109/IICM55040.2021.9730246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 28 GHz fully on-chip Doherty power amplifier with harmonic injection is presented in 65 nm CMOS technology. In order to improve the linearity, two injection amplifier stages biased in class C are used. In this method, injection of the second harmonic compensates the gain compression phenomena and improves the output $\\\\mathrm{P}_{-}1\\\\text{dB}$ and PAE at $\\\\mathrm{P}_{-}1\\\\text{dB}$ by more than 6 dB and 9 %, respectively. Post-Layout EM (electromagnetic) simulation of PA illustrates maximum PAE of 19.6%, output $\\\\mathrm{P}_{-}1\\\\text{dB}$ of 15.76 dBm, PAE of 14% at 6dB back-off, 6 dB gain, and 19 dBm saturated output power. The layout area is 0.445 mm2.\",\"PeriodicalId\":299499,\"journal\":{\"name\":\"2021 Iranian International Conference on Microelectronics (IICM)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Iranian International Conference on Microelectronics (IICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IICM55040.2021.9730246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Iranian International Conference on Microelectronics (IICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICM55040.2021.9730246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28GHz Harmonic Injection Doherty Power Amplifier
In this paper, a 28 GHz fully on-chip Doherty power amplifier with harmonic injection is presented in 65 nm CMOS technology. In order to improve the linearity, two injection amplifier stages biased in class C are used. In this method, injection of the second harmonic compensates the gain compression phenomena and improves the output $\mathrm{P}_{-}1\text{dB}$ and PAE at $\mathrm{P}_{-}1\text{dB}$ by more than 6 dB and 9 %, respectively. Post-Layout EM (electromagnetic) simulation of PA illustrates maximum PAE of 19.6%, output $\mathrm{P}_{-}1\text{dB}$ of 15.76 dBm, PAE of 14% at 6dB back-off, 6 dB gain, and 19 dBm saturated output power. The layout area is 0.445 mm2.
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