S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier
{"title":"在InP衬底上生长出高质量的晶格错配In/sub 0.82/Ga/sub 0.18/As层","authors":"S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier","doi":"10.1109/ICIPRM.1990.203004","DOIUrl":null,"url":null,"abstract":"The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate\",\"authors\":\"S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier\",\"doi\":\"10.1109/ICIPRM.1990.203004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate
The improvement resulting from the use of a graded buffer layer in the quality of In/sub 0.82/Ga/sub 0.18/As layers grown on an InP substrate is reported. Results of Hall effect measurements and of transmission electron microscopy, X-ray diffraction studies, and photoluminescence studies are described. For a graded buffer layer thicker than 2 mu m, Hall mobility values as high as 20300 cm/sup 2/ V/sup -1/ s/sup -1/ have been measured at room temperature with a dislocation density of about 5*10/sup 6/ cm/sup -2/.<>
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