K. Samsudin, B. Cheng, A. R. Brown, S. Roy, A. Asenov
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引用次数: 1
摘要
CMOS的缩放增加了内在参数波动对SRAM成品率和功能的影响。提出了一种统计电路仿真框架，该框架能将固有参数波动信息充分捕捉到紧凑模型中。在物理通道长度为10nm ~ 5nm的超薄体(UTB) SOI mosfet中，研究了源极区和漏极区离散随机掺杂剂对6T SRAM电池的影响。
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm.
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