{"title":"快速热氮化氧化物和去耦等离子体氮化氧化物的等离子体充电损伤免疫","authors":"D. Chong, W. Yoo, C. Lek","doi":"10.1109/IPFA.2003.1222754","DOIUrl":null,"url":null,"abstract":"Plasma process induced damage on rapid thermal nitrided oxide (RTNO) and decoupled plasma nitrided oxide (DPNO) gate dielectrics are evaluated. It is found that the level of plasma induced damage on DPNO is comparable to that of RTNO. Hence, we can conclude that the decoupled plasma nitridation (DPN) process does not introduce significant damage to the silicon dioxide gate dielectric. We also discovered that RTNO fares better than DPNO in term of plasma charging damage immunity when both gate dielectrics are subjected to simulated plasma charging stresses.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasma charging damage immunities of rapid thermal nitrided oxide and decoupled plasma nitrided oxide\",\"authors\":\"D. Chong, W. Yoo, C. Lek\",\"doi\":\"10.1109/IPFA.2003.1222754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma process induced damage on rapid thermal nitrided oxide (RTNO) and decoupled plasma nitrided oxide (DPNO) gate dielectrics are evaluated. It is found that the level of plasma induced damage on DPNO is comparable to that of RTNO. Hence, we can conclude that the decoupled plasma nitridation (DPN) process does not introduce significant damage to the silicon dioxide gate dielectric. We also discovered that RTNO fares better than DPNO in term of plasma charging damage immunity when both gate dielectrics are subjected to simulated plasma charging stresses.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma charging damage immunities of rapid thermal nitrided oxide and decoupled plasma nitrided oxide
Plasma process induced damage on rapid thermal nitrided oxide (RTNO) and decoupled plasma nitrided oxide (DPNO) gate dielectrics are evaluated. It is found that the level of plasma induced damage on DPNO is comparable to that of RTNO. Hence, we can conclude that the decoupled plasma nitridation (DPN) process does not introduce significant damage to the silicon dioxide gate dielectric. We also discovered that RTNO fares better than DPNO in term of plasma charging damage immunity when both gate dielectrics are subjected to simulated plasma charging stresses.
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