V. A. Bykovsky, V. I. Karas, V.F. Shoh, S. Strzelecka, A. Hruban, M. Gładysz
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Influence of fast neutrons on the recombination and electrical properties of neutron transmutation doped gallium arsenide
The electrical properties, photoluminescence and DLTS spectra of LEC gallium arsenide crystals after neutron transmutation doping (NTD) has been investigated as functions of starting material properties, irradiation dose and thermal to fast neutron fluences-ratio. The residual carbon acceptors interact with radiation induced defects (RD) in neutron irradiated GaAs crystals and formed nonradiative recombination centers, which are stable up to 700/spl deg/C.
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