T. Rudenko, V. Kilchytska, M. Arshad, J. Raskin, A. Nazarov, D. Flandre
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引用次数: 3
摘要
在这项工作中，我们利用在UTB SOI mosfet上获得的分析建模和实验数据，通过跨导和跨导电流比变化方法研究了漏极电压对长通道mosfet阈值电压提取的影响。
Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods
In this work, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance and transconductance-to-current-ratio change methods, using analytical modeling and experimental data obtained on UTB SOI MOSFETs.
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