适用于通用高温焊接接头,适用于扩散焊接

J. Strogies, K. Wilke
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引用次数: 2

摘要

本文概述了一种提供高温兼容焊点的通用连接技术的实现。所提供的解决方案的主要成就是克服了在装配过程中连接伙伴的低热预算和在操作过程中合成接头的高熔点的目标冲突。解决这一冲突的一种经济有效的方法是扩散焊接。与热固化相反,这种焊接变体利用材料的浓度变化来实现至少局部高熔化的金属间相。对潜在的材料体系进行综合评价,得到了一个简单的Sn和Cu二元体系,共晶成分为SnCu0.7(熔点温度227℃)和高熔点Cu6Sn5(熔点温度415℃)和Cu3Sn(熔点温度670℃)。扩散焊已经在晶圆到晶圆和芯片到引线框架的焊接技术中使用。在表面贴装技术领域,为了实现广泛的芯片到陶瓷和二级组装的通用连接技术,必须通过技术折痕来解决短桥接距离的挑战。本文概述了分散Cu颗粒和特殊地形元素的技术解决方案,这些技术解决方案提供了将连接区域增加到100 μm的潜力。介绍了主要技术解决方案的工艺流程和设备。给出了该方法在大规模生产中的应用前景和技术可靠性结果。此外,还展示了金相调查的综合分析结果,介绍了扩散焊接互连的新挑战。
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Universal high-temperature suitable joint adapting diffusion soldering
This article outlines the realization of a universal joining technology that provides high temperature compliant solder joints. Major achievement of provided solutions is to overcome the conflict of objectives concerning low thermal budget to joining partners during assembly processes and high melting points of the resultant joints during operation. One cost effective approach to solve this conflict is diffusion soldering. In contrast to thermal solidification this soldering variant uses concentration change of materials to achieve at least locally high-melting intermetallic phases. Comprehensive evaluations of potential material systems led to a simple binary system of Sn and Cu with eutectic composition at SnCu0.7 (melting temperature 227°C) and high melting-temperature phases Cu6Sn5 (Tm about 415°C) and Cu3Sn (Tm about 670°C). Diffusion soldering is used already in wafer to wafer and chip to lead frame soldering technologies. To achieve a universal joining technology with focus on wide range of chip to ceramic and second level assembly in the field of surface mount technology the challenge of short bridgeable distances has to be solved by technical creases. This article outlines technical solutions of dispersed Cu particles and special topographic elements that provide the potential to increase joining zones up to 100 μm. Process flows and equipment for major technological solutions are described. Potential adaption in mass production and results of technical reliability are shown. In addition comprehensive analysis results of metallographic investigations are shown to give an introduction to new challenges of diffusion soldered interconnects.
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