{"title":"基于费米动力学输运的大信号射频GaN HEMT模拟","authors":"N. C. Miller, J. Albrecht, M. Grupen","doi":"10.1109/DRC.2016.7548427","DOIUrl":null,"url":null,"abstract":"This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Large-signal RF GaN HEMT simulation using Fermi Kinetics Transport\",\"authors\":\"N. C. Miller, J. Albrecht, M. Grupen\",\"doi\":\"10.1109/DRC.2016.7548427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.\",\"PeriodicalId\":310524,\"journal\":{\"name\":\"2016 74th Annual Device Research Conference (DRC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 74th Annual Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2016.7548427\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 74th Annual Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2016.7548427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large-signal RF GaN HEMT simulation using Fermi Kinetics Transport
This article presents a computational framework which accurately simulates and characterizes a GaN HEMT power amplifier. The static I-V family is computed and compared to measurements to demonstrate the solver's accuracy, and the device simulation framework is verified by comparing the HB-FKT and T-FKT solvers. Load-pull simulations are used to optimize the amplifier performance by choosing an optimal load impedance. Finally, several figures of merit are presented with the optimal load.
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