{"title":"ULSI制造过程中金属杂质的表征","authors":"H. Sakurai, M. Iwase, A. Shimazaki, S. Nadahara","doi":"10.1109/ISSM.2001.962939","DOIUrl":null,"url":null,"abstract":"It is one of the key points for the \"Agile Fab\" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for \"Agile-Fab.\" We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable \"protocol\" using the result, and to control metallic contamination.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characterization of metallic impurities for the ULSI fabrication process\",\"authors\":\"H. Sakurai, M. Iwase, A. Shimazaki, S. Nadahara\",\"doi\":\"10.1109/ISSM.2001.962939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is one of the key points for the \\\"Agile Fab\\\" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for \\\"Agile-Fab.\\\" We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable \\\"protocol\\\" using the result, and to control metallic contamination.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of metallic impurities for the ULSI fabrication process
It is one of the key points for the "Agile Fab" concept that the process equipment is shared for several processes. On the other hand, new metals tend to be applied for the latest DRAM, FeRAM and logic devices. Therefore, we investigated the behavior of these new metals to derive a protocol for "Agile-Fab." We evaluated their electrical properties and diffusion behavior. It is necessary to construct a suitable "protocol" using the result, and to control metallic contamination.
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