高电压LDMOS晶体管快速瞬态的独特ESD失效机制

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558982

A. Goyal, J. Whitfield, Changsoo Hong, C. Gill, C. Rouying Zhan, V. Kushner, A. Gendron, S. Contractor

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引用次数: 7

摘要

我们已经确定并解释了高压80V LDMOS结构的独特ESD击穿机制，用于非常快速的CDM瞬态。通过在栅极和源上放置齐纳，可以防止在LDMOS栅极处观察到的电压积聚，从而保护该器件免受观察到的损坏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Unique ESD failure mechanism of high voltage LDMOS transistors for very fast transients

We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a zener across the gate and source which prevents the observed voltage build up at the gate of the LDMOS.

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2008 IEEE International Reliability Physics Symposium

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