{"title":"特邀演讲:电阻随机存取存储器(RRAM):材料和器件","authors":"W. Lu","doi":"10.1109/WMED.2013.6544498","DOIUrl":null,"url":null,"abstract":"Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory demonstrations. Recently improved understanding of the resistance switching effects has led to improved device performance. However, challenges such as the tradeoff between programming current and retention still need to be overcome. Another major challenge for RRAM is the “sneak path” problem in the interconnected passive network, and proper “select” elements need to be developed to break the parasitic paths. Effective 3D integration techniques also need to be demonstrated. Different approaches to address these problems will be discussed.","PeriodicalId":134493,"journal":{"name":"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"57 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Invited talk: Resistive random access memory (RRAM): Materials and devices\",\"authors\":\"W. Lu\",\"doi\":\"10.1109/WMED.2013.6544498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory demonstrations. Recently improved understanding of the resistance switching effects has led to improved device performance. However, challenges such as the tradeoff between programming current and retention still need to be overcome. Another major challenge for RRAM is the “sneak path” problem in the interconnected passive network, and proper “select” elements need to be developed to break the parasitic paths. Effective 3D integration techniques also need to be demonstrated. Different approaches to address these problems will be discussed.\",\"PeriodicalId\":134493,\"journal\":{\"name\":\"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"volume\":\"57 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2013.6544498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2013.6544498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Invited talk: Resistive random access memory (RRAM): Materials and devices
Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory demonstrations. Recently improved understanding of the resistance switching effects has led to improved device performance. However, challenges such as the tradeoff between programming current and retention still need to be overcome. Another major challenge for RRAM is the “sneak path” problem in the interconnected passive network, and proper “select” elements need to be developed to break the parasitic paths. Effective 3D integration techniques also need to be demonstrated. Different approaches to address these problems will be discussed.