Bumman Kim, Youngoo Yang, J. Cha, Y. Woo, Jaehyok Yi
{"title":"用双音相位法测量大功率Si LDMOSFET放大器的记忆效应","authors":"Bumman Kim, Youngoo Yang, J. Cha, Y. Woo, Jaehyok Yi","doi":"10.1109/ARFTG.2001.327497","DOIUrl":null,"url":null,"abstract":"We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation\",\"authors\":\"Bumman Kim, Youngoo Yang, J. Cha, Y. Woo, Jaehyok Yi\",\"doi\":\"10.1109/ARFTG.2001.327497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.\",\"PeriodicalId\":331830,\"journal\":{\"name\":\"58th ARFTG Conference Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"58th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2001.327497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation
We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
