J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer
{"title":"一个2.5 dB低噪声6至18 GHz HEMT MMIC放大器","authors":"J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer","doi":"10.1109/MCS.1992.185987","DOIUrl":null,"url":null,"abstract":"A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier\",\"authors\":\"J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer\",\"doi\":\"10.1109/MCS.1992.185987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185987\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier
A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
