用于雷达应用的60 GHz SiGe BiCMOS双接收通道收发器

Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler
{"title":"用于雷达应用的60 GHz SiGe BiCMOS双接收通道收发器","authors":"Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler","doi":"10.23919/EUMIC.2017.8230711","DOIUrl":null,"url":null,"abstract":"In this paper, a 60 GHz double receive channel FMCW transceiver measurement results together with the design procedure and simulations are presented, considering the license free ISM band. 0.13μm SiGe BiCMOS technology having 250/340 GHz of fr/fmax is utilized to fabricate this fully integrated chip with a die area of 1.65 × 1.05 mm2. The chip is composed of two receiver channels including I/Q based downconverter with a conversion gain and input referred 1dB compression point of 23 dB and −26 dBm respectively at 60 GHz and a transmitter block of over 10 dBm output power combined with a 3-way power divider for the LO signal generated by a 3-bit push-push VCO and a divide-by-32 frequency divider. The total current consumption of this block is 230 mA at 3.3 V of single supply. With the help of three 4-patch on-board antennas designed on a standard high frequency material and I/Q signal processing baseband boards, successful outdoor FMCW system measurements with the proposed transceiver are achieved where obstacles above 70m are detectable.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 60 GHz SiGe BiCMOS double receive channel transceiver for radar applications\",\"authors\":\"Efe Öztürk, D. Genschow, U. Yodprasit, Berk Yilmaz, D. Kissinger, W. Debski, W. Winkler\",\"doi\":\"10.23919/EUMIC.2017.8230711\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 60 GHz double receive channel FMCW transceiver measurement results together with the design procedure and simulations are presented, considering the license free ISM band. 0.13μm SiGe BiCMOS technology having 250/340 GHz of fr/fmax is utilized to fabricate this fully integrated chip with a die area of 1.65 × 1.05 mm2. The chip is composed of two receiver channels including I/Q based downconverter with a conversion gain and input referred 1dB compression point of 23 dB and −26 dBm respectively at 60 GHz and a transmitter block of over 10 dBm output power combined with a 3-way power divider for the LO signal generated by a 3-bit push-push VCO and a divide-by-32 frequency divider. The total current consumption of this block is 230 mA at 3.3 V of single supply. With the help of three 4-patch on-board antennas designed on a standard high frequency material and I/Q signal processing baseband boards, successful outdoor FMCW system measurements with the proposed transceiver are achieved where obstacles above 70m are detectable.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230711\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文给出了一种60 GHz双接收通道FMCW收发器的测量结果,并给出了设计过程和仿真结果,考虑了ISM频段是免许可的。该芯片采用0.13μm SiGe BiCMOS技术,具有250/340 GHz的fr/fmax,芯片面积为1.65 × 1.05 mm2。该芯片由两个接收通道组成,其中包括基于I/Q的下变频器,其转换增益和输入参考1dB压缩点在60 GHz时分别为23 dB和- 26 dBm;输出功率超过10 dBm的发送模块,并结合3位推推式VCO和除以32分频器产生的LO信号的3路功率分压器。该模块在3.3 V单电源下的总电流消耗为230 mA。在标准高频材料和I/Q信号处理基带板上设计的三个4补丁板板天线的帮助下,使用所提出的收发器可以在可检测到70米以上障碍物的情况下成功实现室外FMCW系统测量。
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A 60 GHz SiGe BiCMOS double receive channel transceiver for radar applications
In this paper, a 60 GHz double receive channel FMCW transceiver measurement results together with the design procedure and simulations are presented, considering the license free ISM band. 0.13μm SiGe BiCMOS technology having 250/340 GHz of fr/fmax is utilized to fabricate this fully integrated chip with a die area of 1.65 × 1.05 mm2. The chip is composed of two receiver channels including I/Q based downconverter with a conversion gain and input referred 1dB compression point of 23 dB and −26 dBm respectively at 60 GHz and a transmitter block of over 10 dBm output power combined with a 3-way power divider for the LO signal generated by a 3-bit push-push VCO and a divide-by-32 frequency divider. The total current consumption of this block is 230 mA at 3.3 V of single supply. With the help of three 4-patch on-board antennas designed on a standard high frequency material and I/Q signal processing baseband boards, successful outdoor FMCW system measurements with the proposed transceiver are achieved where obstacles above 70m are detectable.
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