{"title":"基于深沟电容的32nm SOI升压和降压DC/DC转换器，具有机会电流借用和快速DVFS功能","authors":"A. Paul, Dong Jiao, S. Sapatnekar, C. Kim","doi":"10.1109/ASSCC.2013.6690979","DOIUrl":null,"url":null,"abstract":"A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"75 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities\",\"authors\":\"A. Paul, Dong Jiao, S. Sapatnekar, C. Kim\",\"doi\":\"10.1109/ASSCC.2013.6690979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.\",\"PeriodicalId\":296544,\"journal\":{\"name\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"75 8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2013.6690979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6690979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities
A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.
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