AMD fab25的全面周期缩短计划

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962923

F. Sadjadi, T. Baker

{"title":"AMD fab25的全面周期缩短计划","authors":"F. Sadjadi, T. Baker","doi":"10.1109/ISSM.2001.962923","DOIUrl":null,"url":null,"abstract":"Manufacturing cycle time at AMD's Fab25 Austin, Texas facility has improved from the bottom third to the top of Sematech's cycle time per mask layer metric list. Steady improvement in cycle time performance has been attained in the midst of a steep ramp from 0.25 /spl mu/m to 0.18 /spl mu/m technology. This paper explains the fundamental changes that were made to accomplish these improvements and evaluate their impact upon Fab25's cycle time reduction efforts. Focus areas of interest are: philosophy and behavior, modeling, dispatching, planning, and operations.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Comprehensive cycle time reduction program at AMD's fab25\",\"authors\":\"F. Sadjadi, T. Baker\",\"doi\":\"10.1109/ISSM.2001.962923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Manufacturing cycle time at AMD's Fab25 Austin, Texas facility has improved from the bottom third to the top of Sematech's cycle time per mask layer metric list. Steady improvement in cycle time performance has been attained in the midst of a steep ramp from 0.25 /spl mu/m to 0.18 /spl mu/m technology. This paper explains the fundamental changes that were made to accomplish these improvements and evaluate their impact upon Fab25's cycle time reduction efforts. Focus areas of interest are: philosophy and behavior, modeling, dispatching, planning, and operations.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

AMD的Fab25 Austin, Texas工厂的制造周期时间已经从Sematech的每个掩膜层周期时间列表的倒数第三位提高到顶部。在从0.25 /spl mu/m到0.18 /spl mu/m技术的陡峭斜坡中，循环时间性能得到了稳步改善。本文解释了为实现这些改进所做的基本改变，并评估了它们对Fab25缩短循环时间的影响。关注的重点领域是:哲学和行为、建模、调度、计划和操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Comprehensive cycle time reduction program at AMD's fab25

Manufacturing cycle time at AMD's Fab25 Austin, Texas facility has improved from the bottom third to the top of Sematech's cycle time per mask layer metric list. Steady improvement in cycle time performance has been attained in the midst of a steep ramp from 0.25 /spl mu/m to 0.18 /spl mu/m technology. This paper explains the fundamental changes that were made to accomplish these improvements and evaluate their impact upon Fab25's cycle time reduction efforts. Focus areas of interest are: philosophy and behavior, modeling, dispatching, planning, and operations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

自引率

0.00%

发文量

期刊最新文献

The practical use of residual gas analysis in a semiconductor thermal processing module Dynamical control method of AMHS for multi-production lines Multi-wafer rapid isothermal processing Remote equipment diagnosis for metal etching process Resource conservation of buffered HF in semiconductor manufacturing