低功率横向驱动纳米机电继电器的设计与材料选择

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404401

K. Yoo, D. Lee, R. Tiberio, J. Conway, H. Wong, Y. Nishi

{"title":"低功率横向驱动纳米机电继电器的设计与材料选择","authors":"K. Yoo, D. Lee, R. Tiberio, J. Conway, H. Wong, Y. Nishi","doi":"10.1109/SOI.2012.6404401","DOIUrl":null,"url":null,"abstract":"This paper reports the design optimization of lateral nanoelectromechanical (NEM) relays for sub 1V actuation by COMSOL simulation with various materials and structures. Measured actuation voltages from fabricated relays showed good matching with simulation.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design and materials selection for low power laterally actuating nanoelectromechanical relays\",\"authors\":\"K. Yoo, D. Lee, R. Tiberio, J. Conway, H. Wong, Y. Nishi\",\"doi\":\"10.1109/SOI.2012.6404401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the design optimization of lateral nanoelectromechanical (NEM) relays for sub 1V actuation by COMSOL simulation with various materials and structures. Measured actuation voltages from fabricated relays showed good matching with simulation.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

采用COMSOL仿真方法对不同材料和结构的亚1V驱动的横向纳米机电(NEM)继电器进行了优化设计。实际测量的继电器驱动电压与仿真结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Design and materials selection for low power laterally actuating nanoelectromechanical relays

This paper reports the design optimization of lateral nanoelectromechanical (NEM) relays for sub 1V actuation by COMSOL simulation with various materials and structures. Measured actuation voltages from fabricated relays showed good matching with simulation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量

期刊最新文献

BSIM-IMG: A Turnkey compact model for fully depleted technologies SOI tri-gate nanowire MOSFETs for ultra-low power LSI Key enabling processes for more-than-moore technologies High voltage SOI MESFETs at the 45nm technology node Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K