一个10.4-ENOB 120MS/s SAR ADC,在90nm CMOS上进行DAC线性校准

Yan Zhu, Chi-Hang Chan, U. Seng-Pan, R. Martins
{"title":"一个10.4-ENOB 120MS/s SAR ADC,在90nm CMOS上进行DAC线性校准","authors":"Yan Zhu, Chi-Hang Chan, U. Seng-Pan, R. Martins","doi":"10.1109/ASSCC.2013.6690984","DOIUrl":null,"url":null,"abstract":"This paper proposes a DAC linearity calibration and a phase-splitting bit register for a SAR ADC. The calibration corrects the conversion nonlinearity of the bridge DAC structure in the digital domain leading to higher accuracy and insensitivity to comparison offset. Moreover, a phase-splitting bit register is presented to optimize the speed of the digital circuitry. Measurements obtained from a 90nm CMOS prototype operating at 120MS/s and 1.2V supply achieve a SNDR of 64.3dB with 3.2mW power dissipation.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A 10.4-ENOB 120MS/s SAR ADC with DAC linearity calibration in 90nm CMOS\",\"authors\":\"Yan Zhu, Chi-Hang Chan, U. Seng-Pan, R. Martins\",\"doi\":\"10.1109/ASSCC.2013.6690984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a DAC linearity calibration and a phase-splitting bit register for a SAR ADC. The calibration corrects the conversion nonlinearity of the bridge DAC structure in the digital domain leading to higher accuracy and insensitivity to comparison offset. Moreover, a phase-splitting bit register is presented to optimize the speed of the digital circuitry. Measurements obtained from a 90nm CMOS prototype operating at 120MS/s and 1.2V supply achieve a SNDR of 64.3dB with 3.2mW power dissipation.\",\"PeriodicalId\":296544,\"journal\":{\"name\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2013.6690984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6690984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

本文提出了一种用于SAR ADC的DAC线性度校准和分相位寄存器。该校准校正了桥式DAC结构在数字域的转换非线性,从而提高了精度和对比较偏移的不敏感性。此外,还提出了一种分相位寄存器来优化数字电路的速度。通过在120MS/s和1.2V电源下工作的90nm CMOS原型获得的测量结果显示,SNDR为64.3dB,功耗为3.2mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 10.4-ENOB 120MS/s SAR ADC with DAC linearity calibration in 90nm CMOS
This paper proposes a DAC linearity calibration and a phase-splitting bit register for a SAR ADC. The calibration corrects the conversion nonlinearity of the bridge DAC structure in the digital domain leading to higher accuracy and insensitivity to comparison offset. Moreover, a phase-splitting bit register is presented to optimize the speed of the digital circuitry. Measurements obtained from a 90nm CMOS prototype operating at 120MS/s and 1.2V supply achieve a SNDR of 64.3dB with 3.2mW power dissipation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Future mobile society beyond Moore's Law A 691 Mbps 1.392mm2 configurable radix-16 turbo decoder ASIC for 3GPP-LTE and WiMAX systems in 65nm CMOS Collaborative innovation for future mobile applications A 0.5V 34.4uW 14.28kfps 105dB smart image sensor with array-level analog signal processing An 85mW 14-bit 150MS/s pipelined ADC with 71.3dB peak SNDR in 130nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1