{"title":"用于ULSI倒装芯片技术的共晶凸点焊工艺","authors":"H. Ezawa, M. Miyata, H. Inoue","doi":"10.1109/IEMT.1997.626934","DOIUrl":null,"url":null,"abstract":"A novel eutectic solder bump process, which allows ULSI chips area array pad layout, has been developed. Straight side wall bumps as plated using a new negative-type photoresist and eutectic solder electroplating provide several advantages over conventional mushroom bumps. The novel developed process gives the bump height uniformity as reflowed of less than 10% within the wafer. Composition measurements using ICP spectrometry have been performed to investigate the bump height dependence on solder compositions and the metal content dependence of a plating solution on the solder composition uniformity within the wafer. Experimental results show that the plating solution with the total metal concentration of more than 60 g/l gives a uniformity at eutectic point of less than 3% within wafer. In addition, we have confirmed that the use of a eutectic solder disk anode keeps the composition of a plating solution constant for a long term product run.","PeriodicalId":227971,"journal":{"name":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Eutectic solder bump process for ULSI flip chip technology\",\"authors\":\"H. Ezawa, M. Miyata, H. Inoue\",\"doi\":\"10.1109/IEMT.1997.626934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel eutectic solder bump process, which allows ULSI chips area array pad layout, has been developed. Straight side wall bumps as plated using a new negative-type photoresist and eutectic solder electroplating provide several advantages over conventional mushroom bumps. The novel developed process gives the bump height uniformity as reflowed of less than 10% within the wafer. Composition measurements using ICP spectrometry have been performed to investigate the bump height dependence on solder compositions and the metal content dependence of a plating solution on the solder composition uniformity within the wafer. Experimental results show that the plating solution with the total metal concentration of more than 60 g/l gives a uniformity at eutectic point of less than 3% within wafer. In addition, we have confirmed that the use of a eutectic solder disk anode keeps the composition of a plating solution constant for a long term product run.\",\"PeriodicalId\":227971,\"journal\":{\"name\":\"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.1997.626934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1997.626934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Eutectic solder bump process for ULSI flip chip technology
A novel eutectic solder bump process, which allows ULSI chips area array pad layout, has been developed. Straight side wall bumps as plated using a new negative-type photoresist and eutectic solder electroplating provide several advantages over conventional mushroom bumps. The novel developed process gives the bump height uniformity as reflowed of less than 10% within the wafer. Composition measurements using ICP spectrometry have been performed to investigate the bump height dependence on solder compositions and the metal content dependence of a plating solution on the solder composition uniformity within the wafer. Experimental results show that the plating solution with the total metal concentration of more than 60 g/l gives a uniformity at eutectic point of less than 3% within wafer. In addition, we have confirmed that the use of a eutectic solder disk anode keeps the composition of a plating solution constant for a long term product run.
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