Mei Bo, Ge Yong, Sun Yi, Z. Hongwei, Zhao Xing, Li Bo, Liu Mengxin
{"title":"用重离子和TCAD模拟研究28nm UTBB-FDSOI器件的SEU","authors":"Mei Bo, Ge Yong, Sun Yi, Z. Hongwei, Zhao Xing, Li Bo, Liu Mengxin","doi":"10.1109/CIRSYSSIM.2018.8525875","DOIUrl":null,"url":null,"abstract":"Single Event Upsets in 28nm UTBB-FDSOI SRAM with several types of radiation hardened Bit-cells are studied by heavy ion irradiation test and TCAD simulation. Heavy-ion SEU cross section of the FDSOI SRAM cell are two decades lower than an equivalent cell in planar bulk technology as reported. Through the hardened design, the 8T bit-cells SRAM is able to reach the upset-immune for low LET heavy ions.","PeriodicalId":127121,"journal":{"name":"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of SEU of 28nm UTBB-FDSOI Device by Heavy Ions and TCAD Simulation\",\"authors\":\"Mei Bo, Ge Yong, Sun Yi, Z. Hongwei, Zhao Xing, Li Bo, Liu Mengxin\",\"doi\":\"10.1109/CIRSYSSIM.2018.8525875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single Event Upsets in 28nm UTBB-FDSOI SRAM with several types of radiation hardened Bit-cells are studied by heavy ion irradiation test and TCAD simulation. Heavy-ion SEU cross section of the FDSOI SRAM cell are two decades lower than an equivalent cell in planar bulk technology as reported. Through the hardened design, the 8T bit-cells SRAM is able to reach the upset-immune for low LET heavy ions.\",\"PeriodicalId\":127121,\"journal\":{\"name\":\"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIRSYSSIM.2018.8525875\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIRSYSSIM.2018.8525875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of SEU of 28nm UTBB-FDSOI Device by Heavy Ions and TCAD Simulation
Single Event Upsets in 28nm UTBB-FDSOI SRAM with several types of radiation hardened Bit-cells are studied by heavy ion irradiation test and TCAD simulation. Heavy-ion SEU cross section of the FDSOI SRAM cell are two decades lower than an equivalent cell in planar bulk technology as reported. Through the hardened design, the 8T bit-cells SRAM is able to reach the upset-immune for low LET heavy ions.