Ikeda Akihiro, K. Nishi, Daichi Marui, H. Ikenoue, T. Asano
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Characteristic of pn junction formed in 4H-SiC by using excimer-laser processing in phosphoric solution
In this report, we extend our investigation to characterization of junctions produced by the excimer laser irradiation to 4H-SiC immersed in phosphoric acid.
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