用于 60V SOI BCD 工艺的新型 ESD 自保护对称 nLDMOS

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628102

Y. Wang, Guangyi Lu, Jian Cao, Qi Liu, Ganggang Zhang, Xing Zhang

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引用次数: 6

摘要

本文介绍了一种新型对称 n 型横向扩散 MOS（sym-nLDMOS）。新型 sym-nLDMOS 采用标准 0.18 μm 60 V SOI BCD 工艺制造，无需任何额外掩模，具有静电放电（ESD）自我保护能力。TLP 测量结果显示，新型 sym-nLDMOS 的 It2 提高了约 1 倍。此外，还测量了新型器件的输出特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process

A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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