{"title":"室温下采用导电AZO薄膜制备的全透明ZnO薄膜晶体管","authors":"Y. Sun, T. Maemoto, S. Sasa","doi":"10.1109/IMFEDK.2014.6867064","DOIUrl":null,"url":null,"abstract":"We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature\",\"authors\":\"Y. Sun, T. Maemoto, S. Sasa\",\"doi\":\"10.1109/IMFEDK.2014.6867064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature
We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×106.
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