{"title":"非均匀二极管结构的OCVD载流子寿命测量","authors":"Vitezslav Benda, Zdenek Novak","doi":"10.1109/MIEL.2002.1003220","DOIUrl":null,"url":null,"abstract":"This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"OCVD carrier lifetime measurements on an inhomogeneous diode structure\",\"authors\":\"Vitezslav Benda, Zdenek Novak\",\"doi\":\"10.1109/MIEL.2002.1003220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
OCVD carrier lifetime measurements on an inhomogeneous diode structure
This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.
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