{"title":"4通道2.5Gb/s/ 66dB/spl ω /无电感跨阻放大器[光接收机应用]","authors":"P. Muller, Y. Leblebici, M. Emsley, M. Ünlü","doi":"10.1109/ESSCIR.2004.1356726","DOIUrl":null,"url":null,"abstract":"We present a fully differential transimpedance amplifier array with 4 parallel channels achieving an aggregate bandwidth of 10 Gb/s in 0.18 /spl mu/m digital CMOS technology. This array is intended to be bundled with an existing silicon-only photodetector to demonstrate the feasibility of monolithic silicon-based photo-detection in the GHz range. The presented transimpedance amplifier drives a load of up to 0.6 pF and handles photodiode capacitance of up to 1 pF.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 4-channel 2.5Gb/s/channel 66dB/spl Omega/ inductorless transimpedance amplifier [optical receiver applications]\",\"authors\":\"P. Muller, Y. Leblebici, M. Emsley, M. Ünlü\",\"doi\":\"10.1109/ESSCIR.2004.1356726\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a fully differential transimpedance amplifier array with 4 parallel channels achieving an aggregate bandwidth of 10 Gb/s in 0.18 /spl mu/m digital CMOS technology. This array is intended to be bundled with an existing silicon-only photodetector to demonstrate the feasibility of monolithic silicon-based photo-detection in the GHz range. The presented transimpedance amplifier drives a load of up to 0.6 pF and handles photodiode capacitance of up to 1 pF.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356726\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present a fully differential transimpedance amplifier array with 4 parallel channels achieving an aggregate bandwidth of 10 Gb/s in 0.18 /spl mu/m digital CMOS technology. This array is intended to be bundled with an existing silicon-only photodetector to demonstrate the feasibility of monolithic silicon-based photo-detection in the GHz range. The presented transimpedance amplifier drives a load of up to 0.6 pF and handles photodiode capacitance of up to 1 pF.
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