用苯并环丁烯薄膜制作的低特性阻抗传输线

W. Sul, Tea-Sin Kang, A. Dan, Young‐Hoon Chun, Mi-Ra Kim, Sam-Dong Kim, In-Suk Hwang, J. Rhee, G. Ryu
{"title":"用苯并环丁烯薄膜制作的低特性阻抗传输线","authors":"W. Sul, Tea-Sin Kang, A. Dan, Young‐Hoon Chun, Mi-Ra Kim, Sam-Dong Kim, In-Suk Hwang, J. Rhee, G. Ryu","doi":"10.1109/COMMAD.2002.1237263","DOIUrl":null,"url":null,"abstract":"Transmission lines of very low characteristic impedance (Z/sub 0/) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. Two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z/sub 0/ values for each CPW type are 7.3 and 9.4 /spl Omega/, respectively, at a signal line width of 100 /spl mu/m. When the ratio between the spacing of bottom-ground and the signal line width becomes greater than 2.5, the Z/sub 0/ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z/sub 0/ of 25.5 /spl Omega/, and this impedance is /spl sim/64 % of the values obtained from the BCB-based CPW structures of the same line width.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low-characteristic impedance transmission line fabricated using benzo-cyclo-butene thin film\",\"authors\":\"W. Sul, Tea-Sin Kang, A. Dan, Young‐Hoon Chun, Mi-Ra Kim, Sam-Dong Kim, In-Suk Hwang, J. Rhee, G. Ryu\",\"doi\":\"10.1109/COMMAD.2002.1237263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transmission lines of very low characteristic impedance (Z/sub 0/) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. Two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z/sub 0/ values for each CPW type are 7.3 and 9.4 /spl Omega/, respectively, at a signal line width of 100 /spl mu/m. When the ratio between the spacing of bottom-ground and the signal line width becomes greater than 2.5, the Z/sub 0/ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z/sub 0/ of 25.5 /spl Omega/, and this impedance is /spl sim/64 % of the values obtained from the BCB-based CPW structures of the same line width.\",\"PeriodicalId\":129668,\"journal\":{\"name\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"volume\":\"147 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2002.1237263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

制作并分析了极低特性阻抗(Z/sub 0/)传输线。传输线是在低介电常数的苯并环丁烯(BCB)薄膜上制备的。共面波导(CPW)结构分为底接地型和双接地型。测量表明,在信号线宽度为100 /spl mu/m时,每种CPW类型的Z/sub 0/值分别为7.3和9.4 /spl ω /。当地底间距与信号线宽度之比大于2.5时,Z/sub 0/接近饱和。此外,使用BCB插入层制备的薄膜微带线显示出非常低的Z/sub 0/,为25.5 /spl ω /,该阻抗为相同线宽的基于BCB的CPW结构的/spl sim/ 64%。
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Low-characteristic impedance transmission line fabricated using benzo-cyclo-butene thin film
Transmission lines of very low characteristic impedance (Z/sub 0/) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. Two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z/sub 0/ values for each CPW type are 7.3 and 9.4 /spl Omega/, respectively, at a signal line width of 100 /spl mu/m. When the ratio between the spacing of bottom-ground and the signal line width becomes greater than 2.5, the Z/sub 0/ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z/sub 0/ of 25.5 /spl Omega/, and this impedance is /spl sim/64 % of the values obtained from the BCB-based CPW structures of the same line width.
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