一个60 ghz直接转换发射器在130纳米CMOS

2008 IEEE Asian Solid-State Circuits Conference Pub Date : 2008-12-12 DOI:10.1109/ASSCC.2008.4708748

F. Zhang, B. Yang, B. Wicks, Z. Liu, C. Ta, Y. Mo, K. Wang, G. Felic, P. Nadagouda, T. Walsh, W. Shieh, I. Mareels, R. Evans, E. Skafidas

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引用次数: 6

摘要

本文介绍了一种采用130nm CMOS工艺的60ghz发射机的系统结构和设计过程。发射机的饱和功率输出优于4dbm，输出参考的1db压缩点为2dbm。从57 GHz到65 GHz的LO到RF端口隔离优于27 dB。据作者所知，这是第一个在130纳米CMOS中集成片上滤波的60 ghz发射机。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 60-GHz direct-conversion transmitter in 130-nm CMOS

This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authorspsila knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering.

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2008 IEEE Asian Solid-State Circuits Conference

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