{"title":"亚微米MOSFET的三晶体管模型","authors":"S. Wong, H. Lin","doi":"10.1109/CICC.1989.56724","DOIUrl":null,"url":null,"abstract":"A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A three-transistor model for submicron MOSFET\",\"authors\":\"S. Wong, H. Lin\",\"doi\":\"10.1109/CICC.1989.56724\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches\",\"PeriodicalId\":165054,\"journal\":{\"name\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1989.56724\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A three-transistor model is presented for simulating threshold voltage reduction due to the charge-sharing effect and damage induced degradation in submicrometer MOSFETs. The channel behavior is treated with three MOSFETs in series. These MOSFETs have different threshold voltages and mobilities due to charge sharing and surface damage. An analytic solution is derived, and the results agree with MINIMOS2 and experimental data. This model is simpler and more computationally efficient for circuit simulation than the usual 2-D numerical modeling approaches
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