高数据速率通信系统中fmax为650 GHz的InP hbt谐波失真分析

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240429

P. Sakalas, M. Schroter, T. Nardmann, H. Zirath

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引用次数: 2

摘要

研究了不同发射极宽度的先进InP异质结双极晶体管(hbt)的高频谐波畸变。紧凑模型(CM) HICUM/L2 v. 2.34的几何可扩展参数采用双区基极集电极电容公式，从hbt的温度相关直流和交流测量以及特殊测试结构中提取。对不同发射极面积的器件进行了单音谐波失真和有源双音负载拉力测量。采用紧凑模型进行数据分析。

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Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems

High frequency (h.f.) harmonic distortion (HD) of advanced InP heterojunction bipolar transistors (HBTs) with various emitter widths was investigated. Geometry scalable parameters for the compact model (CM) HICUM/L2 v. 2.34, featuring a two-region base-collector capacitance formulation, were extracted from temperature dependent DC and AC measurements of HBTs and from the special test structures. Single tone harmonic distortion and active two tone load pull measurements were carried out for different emitter area devices. The compact model was used for data analysis.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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