{"title":"一种自对准垂直开尔文测试结构，用于测量铝和钛硅的接触电阻率","authors":"W. Yang, T. F. Lei, C. Lee","doi":"10.1109/VMIC.1989.78030","DOIUrl":null,"url":null,"abstract":"A self-aligned vertical Kelvin test resistor structure, which not only eliminates the horizontal current crowding but also avoids the misalignment error, is proposed and used to measure p/sub c/ of Al and Ti on Si. For the Al(1%Si)/n/sup +/-Si contact system, a specific contact resistivity of 1*10/sup -7/ Omega -cm/sup 2/ has been measured. For the TiSi/sub 2/ contacts, the TiSi/sub 2/(direct-reaction)/n/sup +/-Si contact offers a lower p/sub c/ than that of the coevaporated TiSi/sub 2//n/sup +/-Si contact, and p/sub c/ does not change even after the contacts are annealed to 900 degrees C.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A self-aligned vertical Kelvin test structure to measure contact resistivities of Al and Ti on Si\",\"authors\":\"W. Yang, T. F. Lei, C. Lee\",\"doi\":\"10.1109/VMIC.1989.78030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A self-aligned vertical Kelvin test resistor structure, which not only eliminates the horizontal current crowding but also avoids the misalignment error, is proposed and used to measure p/sub c/ of Al and Ti on Si. For the Al(1%Si)/n/sup +/-Si contact system, a specific contact resistivity of 1*10/sup -7/ Omega -cm/sup 2/ has been measured. For the TiSi/sub 2/ contacts, the TiSi/sub 2/(direct-reaction)/n/sup +/-Si contact offers a lower p/sub c/ than that of the coevaporated TiSi/sub 2//n/sup +/-Si contact, and p/sub c/ does not change even after the contacts are annealed to 900 degrees C.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A self-aligned vertical Kelvin test structure to measure contact resistivities of Al and Ti on Si
A self-aligned vertical Kelvin test resistor structure, which not only eliminates the horizontal current crowding but also avoids the misalignment error, is proposed and used to measure p/sub c/ of Al and Ti on Si. For the Al(1%Si)/n/sup +/-Si contact system, a specific contact resistivity of 1*10/sup -7/ Omega -cm/sup 2/ has been measured. For the TiSi/sub 2/ contacts, the TiSi/sub 2/(direct-reaction)/n/sup +/-Si contact offers a lower p/sub c/ than that of the coevaporated TiSi/sub 2//n/sup +/-Si contact, and p/sub c/ does not change even after the contacts are annealed to 900 degrees C.<>
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