栅极优先工艺在SOI mosfet上的氧化镧集成

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5757952

A. Nichau, E. D. Ozben, M. Schnee, J. Lopes, A. Besmehn, M. Luysberg, L. Knoll, S. Habicht, V. Mussmann, R. Lupták, S. Lenk, J. Rubio‐Zuazo, G. Castro, D. Buca, Q. Zhao, J. Schubert, S. Mantl

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引用次数: 5

摘要

研究了高温处理后高k LaLuO3/Ti1NX/多晶硅栅极堆界面的化学反应。高温退火后，富钛金属层会降低栅极堆的性能。含有TiN/LaLuO3的栅极堆具有接近化学计量的TiN层，在1000°C, 5s退火期间稳定。采用电学和结构表征两种方法对栅堆的热稳定性进行了研究。基于这些结果，展示了在SOI上门优先MOSFET工艺中集成TiN/LaLuO3的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

The chemical reactions at the higher-k LaLuO3/Ti1NX/poly-Si gate stack interfaces are studied after high temperature treatment. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing. The gate stack containing TiN/LaLuO3 with a near stoichiometric TiN layer is stable during 1000 °C, 5s anneals. Both electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. Based on these results an integration of TiN/LaLuO3 in a gatefirst MOSFET process on SOI is shown.

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Ulis 2011 Ultimate Integration on Silicon

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