An asymmetrical source/drain junction structure for SOI RFIC: immune to floating body effects

Novel integration structures of SOI LDMOS/ NMOS/inductor/capacitor/resistor for RFIC are proposed, combined with several key techniques, including body contact with asymmetrical source/drain junctions, SiO/sub 2//Si/sub 3/N/sub 4/ dual sidewalls and Ti-salicide, etc. These devices are integrated into the SIMOX substrate with simplified process steps. Experimental or simulated results show that floating body effects are well restrained, and DC characteristics are good, while the cutoff frequency of LDMOS is higher than that of conventional devices with lateral body-contact structures.