B. Heydari, E. Adabi, M. Bohsali, B. Afshar, A. Arbabian, A. Niknejad
{"title":"CMOS毫米波放大器的内部单边化技术","authors":"B. Heydari, E. Adabi, M. Bohsali, B. Afshar, A. Arbabian, A. Niknejad","doi":"10.1109/RFIC.2007.380924","DOIUrl":null,"url":null,"abstract":"An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Internal Unilaterization Technique for CMOS mm-Wave Amplifiers\",\"authors\":\"B. Heydari, E. Adabi, M. Bohsali, B. Afshar, A. Arbabian, A. Niknejad\",\"doi\":\"10.1109/RFIC.2007.380924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Internal Unilaterization Technique for CMOS mm-Wave Amplifiers
An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.
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