V. F. Mitin, V. V. Kholevchuk, R. Konakova, E. Venger, V. A. Odarich, O. Rudenko, M. Semen'ko, M. V. Khimenko
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Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates
Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 /spl deg/C. The film thicknesses were varied from 0.8 up to 1.5 /spl mu/m. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.
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