K. Aguir, J. Bandet, D. Lollman, B. Roumiguieres, H. Carchano
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An electrical and Raman spectroscopic study of a-GaAs/sub 1-x/N/sub x//Si heterostructures
We report on electrical properties and Raman scattering of amorphous GaAs/sub 1-x/N/sub x/ deposited on p-doped Si substrates. We have investigated the dielectric character of GaAs/sub 1-x/N/sub x/ in view of its applications in GaAs-based technologies. The a-GaAs/sub 1-x/N/sub x/ thin films are obtained by reactive RF sputtering of a GaAs target. The electrical characteristics of the a-GaAs/sub 1-x/N/sub x//c-Si(p) heterostructures present a MIS-like structure behaviour with some imperfections. Raman scattering points out that a-GaAs/sub 1-x/N/sub x/ is a wide gap material which is formed by the substitution of arsenic by nitrogen in the GaAs network.
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