Charge trapping in single and multiple implant SIMOX buried oxides

The buried oxide in SOI structures influences the electrical parameters, reliability, and the radiation hardness of devices fabricated in the superficial silicon film. Hence, along with advances in SOI (silicon-on-insulator) wafer fabrication, characterization of the buried oxide is an important aspect of SOI technology development. The authors' earlier work demonstrated the superior static and time dependent breakdown properties of multiple implant SIMOX (separation by implantation of oxygen) buried oxide as compared to single implant buried oxide. The previous work used novel kinematic pressure contacts placed directly on the oxide. Experiments to further characterize the charge trapping behavior of SIMOX buried oxides using C-V and I-V measurements are reported. Deposited metal contacts were used for the C-V measurements, and pressure contacts were used for the I-V measurements.<>