{"title":"一种智能功率MOSFET，具有反向电池保护，适用于汽车应用","authors":"K. Sakamoto, N. Fuchigami, K. Takagawa, S. Ohtaka","doi":"10.1109/ISPSD.1996.509448","DOIUrl":null,"url":null,"abstract":"An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals. This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of -16 V is only -750 /spl mu/A. On resistance is 170 m/spl Omega/. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 m /spl Omega/ in a TO-220 package.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An intelligent power MOSFET with reverse battery protection for automotive applications\",\"authors\":\"K. Sakamoto, N. Fuchigami, K. Takagawa, S. Ohtaka\",\"doi\":\"10.1109/ISPSD.1996.509448\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals. This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of -16 V is only -750 /spl mu/A. On resistance is 170 m/spl Omega/. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 m /spl Omega/ in a TO-220 package.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509448\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509448","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An intelligent power MOSFET with reverse battery protection for automotive applications
An intelligent power MOSFET with built-in reverse battery protection, which is essential for automotive power switches, has been developed. The reverse battery protection is achieved without using external control signals. This new power MOSFET can replace the conventional three-terminal power MOSFETs used in automotive applications. Its positive drain breakdown voltage is 71 V and the negative drain current at a drain voltage of -16 V is only -750 /spl mu/A. On resistance is 170 m/spl Omega/. Using the latest fabrication process now available for commercial products, the on-resistance can be reduced to less than 50 m /spl Omega/ in a TO-220 package.
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